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题名: Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
作者: Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo)
发表日期: 2007
摘要: The effects of Si and Mg doping on the crystalline quality and In distribution in the InGaN films were studied by atomic force microscope (AFM), triple crystal X-ray diffraction (TCXRD) and Rutherford backscattering spectrometry (RBS). The undoped, Si-doped and Mg-doped InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) on (0 0 0 1) sapphire substrates. The electronic concentration in the Si-doped InGaN is about 2 x 10(19) cm(-3). It is found that the crystalline quality and In distribution in InGaN is slightly affected by the Si doping. In the Mg doped-case, the hole concentration is about 4 x 10(18) cm(-3) after annealing treatment. The surface morphology and crystalline quality of the Mg-doped InGaN are deteriorated significantly compared with the undoped InGaN. The growth rate of Mg-doped InGaN is higher than the undoped InGaN. Mg doping enhances the In incorporation in the InGaN alloy. The increase in In composition in the growth direction is more severe than the undoped InGaN. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: doping
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ran, JX (Ran, Junxue); Wang, XL (Wang, Xiaoliang); Hu, GX (Hu, Guoxin); Li, JP (Li, Jianping); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin); Wang, ZG (Wang, Zhanguo) .Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD ,JOURNAL OF CRYSTAL GROWTH,JAN 2007,298 Sp.Iss.SI (0):235-238
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