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题名: Study on optical properties of Er/Er+O doped GaN thin films
作者: Song SF (Song Shu-Fan);  Chen WD (Chen Wei-De);  Xu ZJ (Xu Zhen-Jia);  Xu XR (Xu Xu-Rong)
发表日期: 2007
摘要: We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er + O co-implanted GaN, and discuss the influence of O ions on Er3+ -related infrared photoluminescence (PL). It is found that Er3+ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm and one additional new peak at 360cm is introduced after Er + O implantation. It is proposed that the broad structure around 300 cm(-1) mode originates from disorder-activated scattering (DARS). The Raman peak at 670 cm is assigned to nitrogen vacancy related defects. The 360 cm peak is attributed to the O implantation induced defect complexes (vacancies, interstitial, or anti-sites in the host). The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL of GaN: Er + O.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song, SF (Song Shu-Fan); Chen, WD (Chen Wei-De); Xu, ZJ (Xu Zhen-Jia); Xu, XR (Xu Xu-Rong) .Study on optical properties of Er/Er+O doped GaN thin films ,ACTA PHYSICA SINICA,MAR 2007,56 (3):1621-1626
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