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题名: Generation and suppression of deep level defects in InP
作者: Zhao YW (Zhao You-Wen);  Dong ZY (Dong Zhi-Yuan)
发表日期: 2007
摘要: Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating InP materials. In contrast, few deep level defects exist in InP after annealing in iron phosphide ambient. The generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. The in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of P anti-site defects and iron deep acceptors, respectively. T e results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and P anti-site, etc., whereas indium vacancies and P anti-site defects. are formed after annealing in phosphor-us ambient. The nature of the deep level defects in InP has been studied based on the results.
KOS主题词: Indium phosphide
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan) .Generation and suppression of deep level defects in InP ,ACTA PHYSICA SINICA,MAR 2007,56 (3):1476-1479
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