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题名: Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes
作者: Fu SH (Fu Sheng-Hui);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui)
发表日期: 2007
摘要: Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.
刊名: CHINESE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Fu, SH (Fu Sheng-Hui); Song, GF (Song Guo-Feng); Chen, LH (Chen Liang-Hui) .Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes ,CHINESE PHYSICS,MAR 2007,16 (3):817-820
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