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题名: Extremely low density InAs quantum dots with no wetting layer
作者: Huang, SS (Huang She-Song);  Niu, ZC (Niu Zhi-Chuan);  Ni, HQ (Ni Hai-Qiao);  Zhan, F (Zhan Feng);  Zhao, H (Zhao Huan);  Sun, Z (Sun Zheng);  Xia, JB (Xia Jian-Bai)
发表日期: 2007
摘要: Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Huang, SS (Huang She-Song); Niu, ZC (Niu Zhi-Chuan); Ni, HQ (Ni Hai-Qiao); Zhan, F (Zhan Feng); Zhao, H (Zhao Huan); Sun, Z (Sun Zheng); Xia, JB (Xia Jian-Bai) .Extremely low density InAs quantum dots with no wetting layer ,CHINESE PHYSICS LETTERS,APR 2007,24 (4):1025-1028
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