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题名: Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD
作者: Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Li JM (Li Jinmin);  Liu Z (Liu Zhe);  Duan RF (Duan Ruifei)
发表日期: 2007
摘要: GaN epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(MOCVD). AFM and SEM were used to analyze the surface morphology of GaN films. Hardness and critical load of GaN films were measured by an nano-indentation tester, friction coefficient by reciprocating UMT-2MT tribometer. It is found that the surface of GaN film is smooth and the epitaxial growth mechanism is in two-dimension mode, GaN epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 MPa and elastic modulus is 299.5 GPa. Adhesion strength of epitaxial GaN to sapphire is high, and critical load reaches 1.6 N. Friction coefficient against GCr15 ball is steadily close to 0.13, while GaN films turns to be broken rapidly by using Si3N4 ceramic ball as counterpart.
刊名: RARE METAL MATERIALS AND ENGINEERING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wei, TB (Wei Tongbo); Wang, JX (Wang Junxi); Li, JM (Li Jinmin); Liu, Z (Liu Zhe); Duan, RF (Duan Ruifei) .Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD ,RARE METAL MATERIALS AND ENGINEERING,MAR 2007,36 (3):416-419
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