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题名: Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings
作者: Ding, F (Ding, Fei);  Wang, LJ (Wang, Lijuan);  Kiravittaya, S (Kiravittaya, Suwit);  Muller, E (Mueller, Elisabeth);  Rastelli, A (Rastelli, Armando);  Schmidt, OG (Schmidt, Oliver G.)
发表日期: 2007
摘要: The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ding, F (Ding, Fei); Wang, LJ (Wang, Lijuan); Kiravittaya, S (Kiravittaya, Suwit); Muller, E (Mueller, Elisabeth); Rastelli, A (Rastelli, Armando); Schmidt, OG (Schmidt, Oliver G.) .Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings ,APPLIED PHYSICS LETTERS,APR 23 2007,90 (17):Art.No.173104
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