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题名: Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy
作者: Tangring, I (Tangring, I.);  Wang, SM (Wang, S. M.);  Sadeghi, M (Sadeghi, M.);  Larsson, A (Larsson, A.);  Wang, XD (Wang, X. D.)
发表日期: 2007
摘要: We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Tangring, I (Tangring, I.); Wang, SM (Wang, S. M.); Sadeghi, M (Sadeghi, M.); Larsson, A (Larsson, A.); Wang, XD (Wang, X. D.) .Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,APR 2007,301(0):971-974
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