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题名: Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition
作者: Zhao YM (Zhao Yong-Mei);  Sun GS (Sun Guo-Sheng);  Li JY (Li Jia-Ye);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Li JM (Li Jin-Min)
发表日期: 2007
摘要: A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.
KOS主题词: Substrate
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, YM (Zhao Yong-Mei); Sun, GS (Sun Guo-Sheng); Li, JY (Li Jia-Ye); Liu, XF (Liu Xing-Fang); Wang, L (Wang Lei); Zhao, WS (Zhao Wan-Shun); Li, JM (Li Jin-Min) .Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition ,CHINESE PHYSICS LETTERS,JUN 2007,24 (6):1753-1755
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