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题名: Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer
作者: Ma ZY (Ma Zhi-Yong);  Wang XL (Wang Xiao-Liang);  Hu GX (Hu Guo-Xin);  Ran JX (Ran Jun-Xue);  Xiao HL (Xiao Hong-Ling);  Luo WJ (Luo Wei-Jun);  Tang J (Tang Jian);  Li JP (Li Jian-Ping);  Li JM (Li Jin-Min)
发表日期: 2007
摘要: A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ma, ZY (Ma Zhi-Yong); Wang, XL (Wang Xiao-Liang); Hu, GX (Hu Guo-Xin); Ran, JX (Ran Jun-Xue); Xiao, HL (Xiao Hong-Ling); Luo, WJ (Luo Wei-Jun); Tang, J (Tang Jian); Li, JP (Li Jian-Ping); Li, JM (Li Jin-Min) .Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer ,CHINESE PHYSICS LETTERS,JUN 2007,24 (6):1705-1708
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