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题名: Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates
作者: Wu J;  Jiao YH;  Jin P;  Lv XJ;  Wang ZG
发表日期: 2007
摘要: Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (theta - theta(c)) after the critical InAs coverage theta(c) during the two- to three-dimensional (2D-3D) transition. For MBE the variation was consistent with the power law N(theta) (theta similar to theta(c))(alpha); while for MEE, the linear relation N(theta) proportional to (theta - theta(c)) was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.
刊名: NANOTECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu, J (Wu, J.); Jiao, YH (Jiao, Y. H.); Jin, P (Jin, P.); Lv, XJ (Lv, X. J.); Wang, ZG (Wang, Z. G.) .Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates ,NANOTECHNOLOGY,JUL 4 2007,18 (26):Art.No.265304
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