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题名: The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer
作者: Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Liang JW
发表日期: 2007
摘要: The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Zhu, JJ (Zhu, J. J.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, Hui); Liang, JW (Liang, J. W.) .The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer ,JOURNAL OF CRYSTAL GROWTH,MAY 15 2007,303 (2):414-418
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