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题名: Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
作者: Zhou WZ;  Huang ZM;  Qiu ZJ;  Lin T;  Shang LY;  Li DL;  Gao HL;  Cui LJ;  Zeng YP;  Guo SL;  Gui YS;  Dai N;  Chu JH
发表日期: 2007
摘要: Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved.
KOS主题词: Quantum wells
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, WZ (Zhou, W. Z.); Huang, ZM (Huang, Z. M.); Qiu, ZJ (Qiu, Z. J.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.) .Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well ,SOLID STATE COMMUNICATIONS,MAY 2007,142 (7):393-397
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