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题名: Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
作者: Zhang WC (Zhang Wancheng);  Nishiguchi K (Nishiguchi Katsuhiko);  Ono Y (Ono Yukinori);  Fujiwara A (Fujiwara Akira);  Yamaguchi H (Yamaguchi Hiroshi);  Inokawa H (Inokawa Hiroshi);  Takahashi Y (Takahashi Yasuo);  Wu, NJ (Wu, Nan-Jian)
发表日期: 2007
摘要: A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.
刊名: IEICE TRANSACTIONS ON ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang, WC (Zhang, Wancheng); Nishiguchi, K (Nishiguchi, Katsuhiko); Ono, Y (Ono, Yukinori); Fujiwara, A (Fujiwara, Akira); Yamaguchi, H (Yamaguchi, Hiroshi); Inokawa, H (Inokawa, Hiroshi); Takahashi, Y (Takahashi, Yasuo); Wu, NJ (Wu, Nan-Jian) .Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors ,IEICE TRANSACTIONS ON ELECTRONICS,MAY 2007,E90C (5):943-948
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