SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy
Fan HB (Fan Hai-Bo); Yang SY (Yang Shao-Yan); Zhang PF (Zhang Pan-Feng); Wei HY (Wei Hong-Yuan); Liu XL (Liu Xiang-Lin); Jiao CM (Jiao Chun-Mei); Zhu QS (Zhu Qin-Sheng); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo); Fan, HB, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hbfan@semi.ac.cn; sh-yyang@semi.ac.cn
2007
Source PublicationCHINESE PHYSICS LETTERS
ISSNISSN: 0256-307X
Volume24Issue:7Pages:2108-2111
AbstractZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.
metadata_83chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
KeywordThin-films
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9416
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorFan, HB, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hbfan@semi.ac.cn; sh-yyang@semi.ac.cn
Recommended Citation
GB/T 7714
Fan HB ,Yang SY ,Zhang PF ,et al. Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy[J]. CHINESE PHYSICS LETTERS,2007,24(7):2108-2111.
APA Fan HB .,Yang SY .,Zhang PF .,Wei HY .,Liu XL .,...&sh-yyang@semi.ac.cn.(2007).Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy.CHINESE PHYSICS LETTERS,24(7),2108-2111.
MLA Fan HB ,et al."Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy".CHINESE PHYSICS LETTERS 24.7(2007):2108-2111.
Files in This Item:
File Name/Size DocType Version Access License
2059.pdf(340KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Fan HB (Fan Hai-Bo)]'s Articles
[Yang SY (Yang Shao-Yan)]'s Articles
[Zhang PF (Zhang Pan-Feng)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Fan HB (Fan Hai-Bo)]'s Articles
[Yang SY (Yang Shao-Yan)]'s Articles
[Zhang PF (Zhang Pan-Feng)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Fan HB (Fan Hai-Bo)]'s Articles
[Yang SY (Yang Shao-Yan)]'s Articles
[Zhang PF (Zhang Pan-Feng)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.