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题名: Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique
作者: Bao ZH (Bao Zhi-Hua);  Jing WP (Jing Wei-Ping);  Luo XD (Luo Xiang-Dong);  Tan PH (Tan Ping-Heng)
发表日期: 2007
摘要: Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV above the bandgap of GaAs (E-0). By analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the E-0 + Delta(0) bandgap in semi-insulated GaAs, which was further verified by Raman results. The observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the E-0 + Delta(0) energy level were very similar to those from the E-0 of GaAs. This mainly resulted from the common conduction band around Gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk GaAs were mainly determined by the intrinsic properties of the conduction band. Our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Bao, ZH (Bao Zhi-Hua); Jing, WP (Jing Wei-Ping); Luo, XD (Luo Xiang-Dong); Tan, PH (Tan Ping-Heng) .Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique ,ACTA PHYSICA SINICA,JUL 2007,56 (7):4213-4217
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