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题名: Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems
作者: Zhou WZ (Zhou Wen-Zheng);  Lin T (Lin Tie);  Shang LY (Shang Li-Yan);  Huang ZM (Huang Zhi-Ming);  Cui LJ (Cui Li-Jie);  Li DL (Li Dong-Lin);  Gao HL (Gao Hong-Ling);  Zeng YP (Zeng Yi-Pine);  Guo SL (Guo Shao-Ling);  Gui YS (Gui Yong-Sheng);  Chu JH (Chu Jun-Hao)
发表日期: 2007
摘要: Magneto-transport measurements have been carried out on three heavily Si delta-doped In-0.52 Al-0.48 As/In-0.53 Ga-0.47 As/In-0.52 A(10.48) As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SIA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant alpha and the zero-field spin splitting Delta(0) by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing alpha and Delta(0) is important in designing future spintronics devices that utilize the Rashba SO coupling.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, WZ (Zhou Wen-Zheng); Lin, T (Lin Tie); Shang, LY (Shang Li-Yan); Huang, ZM (Huang Zhi-Ming); Cui, LJ (Cui Li-Jie); Li, DL (Li Dong-Lin); Gao, HL (Gao Hong-Ling); Zeng, YP (Zeng Yi-Pine); Guo, SL (Guo Shao-Ling); Gui, YS (Gui Yong-Sheng); Chu, JH (Chu Jun-Hao) .Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems ,ACTA PHYSICA SINICA,JUL 2007,56 (7):4099-4104
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