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题名: Effect of heavy boron doping on the electrical characteristics of SiGeHBTs
作者: Yao F (Yao Fei);  Xue CL (Xue Chun-Lai);  Cheng BW (Cheng Bu-Wen);  Wang QM (Wang Qi-Ming)
发表日期: 2007
摘要: A modified version of the Jain-Roulston (J-R) model is developed that takes into account the compensation effect of B to Ge in strained SiGe layers for the first time. Based on this new model, the distribution of the bandgap narrowing (BGN) between the conduction and valence bands is calculated. The influence of this distribution on the transport characteristics of abrupt SiGe heterojunction bipolar transistors (HBTs) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. The results show that our modified J-R model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.
KOS主题词: Bipolar transistors
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yao, F (Yao, Fei); Xue, CL (Xue, Chun-Lai); Cheng, BW (Cheng, Bu-Wen); Wang, QM (Wang, Qi-Ming) .Effect of heavy boron doping on the electrical characteristics of SiGeHBTs ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,AUG 2007,22 (8):890-895
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