SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping); Gao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@red.semi.ac.cn
2007
Source PublicationACTA PHYSICA SINICA
ISSNISSN: 1000-3290
Volume56Issue:8Pages:4955-4959
AbstractMagnetotransport properties of In-0.53 GaAs/In-0.52 AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 T at 1.4 K. Fast Fourier transform has been employed to obtain the subband density and mobility of the two-dimensional electron gas in these HEMT structures. We found that the thickness of channel does not significantly enhance the electron density of the two-dimensional electron gas, however, it has strong effect on the proportion of electrons inhabited in different subbands. When the size of channel is 20 nm, the number of electrons occupying the excited subband, which have higher mobility, reaches the maximum. The experimental values obtained in this work are useful for the design and optimization of InGaAs/InAlAs HEMT devices.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china
KeywordChannel Thickness
Subject Area半导体材料
Indexed BySCI
Language中文
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9346
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorGao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Gao, HL ,Li, DL ,Zhou, WZ ,et al. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness[J]. ACTA PHYSICA SINICA,2007,56(8):4955-4959.
APA Gao, HL .,Li, DL .,Zhou, WZ .,Shang, LY .,Wang, BQ .,...&Gao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@red.semi.ac.cn.(2007).Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness.ACTA PHYSICA SINICA,56(8),4955-4959.
MLA Gao, HL ,et al."Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness".ACTA PHYSICA SINICA 56.8(2007):4955-4959.
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