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题名: Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
作者: Gao, HL (Gao Hong-Ling);  Li, DL (Li Dong-Lin);  Zhou, WZ (Zhou Wen-Zheng);  Shang, LY (Shang Li-Yan);  Wang, BQ (Wang Bao-Qiang);  Zhu, ZP (Zhu Zhan-Ping);  Zeng, YP (Zeng Yi-Ping)
发表日期: 2007
摘要: Magnetotransport properties of In-0.53 GaAs/In-0.52 AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 T at 1.4 K. Fast Fourier transform has been employed to obtain the subband density and mobility of the two-dimensional electron gas in these HEMT structures. We found that the thickness of channel does not significantly enhance the electron density of the two-dimensional electron gas, however, it has strong effect on the proportion of electrons inhabited in different subbands. When the size of channel is 20 nm, the number of electrons occupying the excited subband, which have higher mobility, reaches the maximum. The experimental values obtained in this work are useful for the design and optimization of InGaAs/InAlAs HEMT devices.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping) .Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness ,ACTA PHYSICA SINICA,AUG 2007,56 (8):4955-4959
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