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题名: Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
作者: Hu LJ (Hu Liang-Jun);  Chen YH (Chen Yong-Hai);  Ye XL (Ye Xiao-Ling);  Wang ZG (Wang Zhan-Guo)
发表日期: 2007
摘要: Mn ions were doped into InAs/GaAs quantum dots samples by high energy. implantation and subsequent annealing. The optical and electric properties of the samples have been studied. The photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. By studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. The latter change in the photoluminescence peaks is probably attributed to that Mn ions entering the InAs quantum dots, which release the strain of the quantum dots. For the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 K.
KOS主题词: Ion implantation
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Hu, LJ (Hu Liang-Jun); Chen, YH (Chen Yong-Hai); Ye, XL (Ye Xiao-Ling); Wang, ZG (Wang Zhan-Guo) .Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation ,ACTA PHYSICA SINICA,AUG 2007,56 (8):4930-4935
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