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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method
作者: Yin ZG (Yin Zhigang);  Chen NF (Chen Nuofu);  Dai RX (Dai Ruixuan);  Liu L (Liu Lei);  Zhang XW (Zhang Xingwang);  Wang XH (Wang Xiaohui);  Wu JL (Wu Jinliang);  Chai CL (Chai Chunlin)
发表日期: 2007
摘要: Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: Nanostructured materials
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yin, ZG (Yin, Zhigang); Chen, NF (Chen, Nuofu); Dai, RX (Dai, Ruixuan); Liu, L (Liu, Lei); Zhang, XW (Zhang, Xingwang); Wang, XH (Wang, Xiaohui); Wu, JL (Wu, Jinliang); Chai, CL (Chai, Chunlin) .On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method ,JOURNAL OF CRYSTAL GROWTH,JUL 1 2007,305 (1):296-301
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