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题名: The correlation between preferred orientation and performance of ITO thin films
作者: Chen Y (Chen Yao);  Zhou YQ (Zhou Yuqin);  Zhang QF (Zhang Qunfang);  Zhu MF (Zhu Meifang);  Liu FZ (Liu Fengzhen)
发表日期: 2007
摘要: The tin-doped indium oxide (ITO) thin films were prepared by reactive thermal evaporation on the glass substrates. The effects of substrate temperatures (T-s) on the grain preferred orientation, the electrical and optical properties of ITO films were studied. X-ray diffraction (XRD) patterns indicated that the preferred orientation of film changes from (222) to (400) as T, > 200 degrees C. It can be explained by that the low-index crystallographic planes are easier to be formed when the adatoms have high surface mobility. The Hall measurements indicated that both the concentration and mobility of carrier increase with increasing T,,,. The grain orientation of film does not influence the transmissivity and the carrier concentration, but enhances the carrier mobility. The transmissivity of ITO films is over 90% in the visible wavelength region (except that of the film deposited at 125 degrees C). A minimum resistivity of 5 X 10-4 Omega cm is achieved for the (400) preferred orientation film. Thus, the highest figure of merit of 3.5 x 10(-2) square/Omega is obtained for the film with (400) preferred orientation. The correlation between the preferred orientation and electrical and optical properties are discussed.
KOS主题词: Electrical properties
刊名: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen, Y (Chen, Yao); Zhou, YQ (Zhou, Yuqin); Zhang, QF (Zhang, Qunfang); Zhu, MF (Zhu, Meifang); Liu, FZ (Liu, Fengzhen) .The correlation between preferred orientation and performance of ITO thin films ,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,OCT 2007 ,18 Suppl.1 (0):S411-S414
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