高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Temperature dependence of absorption edge in MOCVD grown GaN
作者: Majid A (Majid Abdul);  Ali A (Ali Akbar);  Zhu JJ (Zhu Jianjun)
发表日期: 2007
摘要: We have studied the temperature dependence of absorption edge of GaN thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. A shift in absorption edge of about 55 meV has been observed in temperature range 273-343 K. We have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(E - E-g + KT)/KT]. Temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using E-g(T) = E-g(273 K) - (8.8 x 10(-4)T(2))/(483 + T) + 0.088 (Varshni empirical formula) and E-g(T) = E-g(273 K)-0.231447/[exp(362/T)-1] + 0.082 relations. It has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. Debye temperature (483 K) and Einstein temperature (362 K) in the respective equations are found mutually in good agreement.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1994.pdf312KbAdobe PDF浏览/下载


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun) .Temperature dependence of absorption edge in MOCVD grown GaN ,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,DEC 2007,18 (12):1229-1233
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Majid A (Majid Abdul)]的文章
 [Ali A (Ali Akbar)]的文章
 [Zhu JJ (Zhu Jianjun)]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Majid A (Majid Abdul)]的文章
 [Ali A (Ali Akbar)]的文章
 [Zhu JJ (Zhu Jianjun)]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发