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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition
作者: Sun JY (Sun Jiayin);  Chen J (Chen Jing);  Wang X (Wang Xi);  Wang JF (Wang Jianfeng);  Liu W (Liu Wei);  Zhu JJ (Zhu Jianjun);  Yang H (Yang Hui)
发表日期: 2007
摘要: The GaN film was grown on the (111) silicon-on-insulator (SOI) substrate by metal-organic chemical vapor deposition and then annealed in the deposition chamber. A multiple beam optical stress sensor was used for the in-situ stress measurement, and X-ray diffraction (XRD) and Raman spectroscopy were used for the characterization of GaN film. Comparing the characterization results of the GaN films on the bulk silicon and SOI substrates, we can see that the Raman spectra show the 3.0 cm(-1) frequency shift of E-2(TO), and the full width at half maximum of XRD rocking curves for GaN (0002) decrease from 954 arc see to 472 are sec. The results show that the SOI substrates can reduce the tensile stress in the GaN film and improve the crystalline quality. The annealing process is helpful for the stress reduction of the GaN film. The SOI substrate with the thin top silicon film is more effective than the thick top silicon film SOI substrate for the stress reduction. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: MATERIALS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, JY (Sun, Jiayin); Chen, J (Chen, Jing); Wang, X (Wang, Xi); Wang, JF (Wang, Jianfeng); Liu, W (Liu, Wei); Zhu, JJ (Zhu, Jianjun); Yang, H (Yang, Hui) .Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition ,MATERIALS LETTERS,SEP 2007,61 (22):4416-4419
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