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题名: Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
作者: Shi LW;  Chen YH;  Xu B;  Wang ZC;  Wang ZG
发表日期: 2007
摘要: Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length. (c) 2007 Elsevier B.V. All rights reserved.
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Shi, LW (Shi, L. W.); Chen, YH (Chen, Y. H.); Xu, B (Xu, B.); Wang, ZC (Wang, Z. C.); Wang, ZG (Wang, Z. G.) .Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,SEP 2007,39 (2):203-208
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