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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Simulation research of nonlinear behavior induced by the charge-carrier effect in resonant-cavity-enhanced photodetectors
作者: Guo JC (Guo Jianchuan);  Zuo YH (Zuo Yuhua);  Zhang Y (Zhang Yun);  Ding WC (Ding Wuchang);  Cheng BW (Cheng Buwen);  Yu JZ (Yu, Jinzhong);  Wang QM (Wang, Qiming)
发表日期: 2007
摘要: In this paper, we have calculated and discussed in detail the nonlinear effect induced by three carrier effects: free-carrier absorption, bandgap filling, and bandgap shrinkage. The central wavelength of response of resonant-cavity-enhanced (RCE) photodetectors shifts according to the change of the refractive index, and the response of a given optical wavelength simultaneously changes.With an increasing As composition of ln(1-x)Ga(x)As(y)P(1-y) and the spacer thickness, the nonlinear effect increases, but the -1-dB input saturation optical power and the -1-dB saturation photocurrent decrease. Bistable-state operation occurs when the input optical power is in the proper bistable region.
刊名: JOURNAL OF LIGHTWAVE TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Guo, JC (Guo, Jianchuan); Zuo, YH (Zuo, Yuhua); Zhang, Y (Zhang, Yun); Ding, WC (Ding, Wuchang); Cheng, BW (Cheng, Buwen); Yu, JZ (Yu, Jinzhong); Wang, QM (Wang, Qiming) .Simulation research of nonlinear behavior induced by the charge-carrier effect in resonant-cavity-enhanced photodetectors ,JOURNAL OF LIGHTWAVE TECHNOLOGY,SEP 2007,25 (9):2783-2790
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