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题名: Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
作者: Zhao, YW (Zhao You-Wen);  Miao, SS (Miao Shan-Shan);  Dong, ZY (Dong Zhi-Yuan);  Lue, XH (Lue Xiao-Hong);  Deng, AH (Deng Ai-Hong);  Yang, J (Yang Jun);  Wang, B (Wang Bo)
发表日期: 2007
摘要: As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.
KOS主题词: Indium phosphide
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo) .Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property ,ACTA PHYSICA SINICA,SEP 2007,56 (9):5536-5541
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