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题名: Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density
作者: Zheng, ZS (Zheng Zhong-Shan);  Zhang, EX (Zhang En-Xia);  Liu, ZL (Liu Zhong-Li);  Zhang, ZX (Zhang Zheng-Xuan);  Li, N (Li Ning);  Li, GH (Li Guo-Hua)
发表日期: 2007
摘要: In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.
KOS主题词: Lithography, Electron beam
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Liu, ZL (Liu Zhong-Li); Zhang, ZX (Zhang Zheng-Xuan); Li, N (Li Ning); Li, GH (Li Guo-Hua) .Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density ,ACTA PHYSICA SINICA,SEP 2007,56 (9):5446-5451
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