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题名: Calculation of energy levels in InGaAs/GaAs quantum dot array
作者: Xiao-Jie, Y (Yang Xiao-Jie);  Qing, W (Wang Qing);  Wen-Quan, M (Ma Wen-Quan);  Liang-Hui, C (Chen Liang-Hui)
发表日期: 2007
摘要: The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xiao-Jie, Y (Yang Xiao-Jie); Qing, W (Wang Qing); Wen-Quan, M (Ma Wen-Quan); Liang-Hui, C (Chen Liang-Hui) .Calculation of energy levels in InGaAs/GaAs quantum dot array ,ACTA PHYSICA SINICA,SEP 2007,56 (9):5429-5435
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