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题名: Photoluminescence degradation in GaN induced by light enhanced surface oxidation
作者: Liu WB (Liu Wenbao);  Sun X (Sun Xian);  Zhang S (Zhang Shuang);  Chen J (Chen Jun);  Wang H (Wang Hui);  Wang XL (Wang Xiaolan);  Zhao DG (Zhao Degang);  Yang H (Yang Hui)
发表日期: 2007
摘要: The exponential degradation of the photoluminescence (PL) intensity at the near-band-gap was observed in heavily doped or low-quality GaN with pristine surface under continuous helium-cadmium laser excitation. In doped GaN samples, the degradation speed increased with doping concentration. The oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. The oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of Ga 3d binding energy. The reason for PL degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, WB (Liu, Wenbao); Sun, X (Sun, Xian); Zhang, S (Zhang, Shuang); Chen, J (Chen, Jun); Wang, H (Wang, Hui); Wang, XL (Wang, Xiaolan); Zhao, DG (Zhao, Degang); Yang, H (Yang, Hui) .Photoluminescence degradation in GaN induced by light enhanced surface oxidation ,JOURNAL OF APPLIED PHYSICS,OCT 1 2007,102 (7):Art.No.076112
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