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题名: Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure
作者: Gong J;  Liang XX;  Ban SL
发表日期: 2007
摘要: The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.
KOS主题词: Time
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gong, J (Gong, J.); Liang, XX (Liang, X. X.); Ban, SL (Ban, S. L.) .Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure ,JOURNAL OF APPLIED PHYSICS,OCT 1 2007,102 (7):Art.No.073718
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