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题名: Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE
作者: Wang XY (Wang Xiaoyan);  Wang XL (Wang Xiaoliang);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li AN (Li Antnin)
发表日期: 2007
摘要: Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KOS主题词: atomic layer deposition
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, AN (Li, Antnin) .Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,OCT 2007,204 (10):3405-3409
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