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题名: Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
作者: Zhao J (Zhao, Jianzhi);  Lin Z (Lin, Zhaojun);  Corrigan TD (Corrigan, Timothy D.);  Wang Z (Wang, Zhen);  You Z (You, Zhidong);  Wang Z (Wang, Zhanguo)
发表日期: 2007
摘要: Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.
KOS主题词: Field-effect transistors
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, J (Zhao, Jianzhi); Lin, Z (Lin, Zhaojun); Corrigan, TD (Corrigan, Timothy D.); Wang, Z (Wang, Zhen); You, Z (You, Zhidong); Wang, Z (Wang, Zhanguo) .Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures ,APPLIED PHYSICS LETTERS,OCT 22 2007,91 (17):Art.No.173507
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