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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Field emission mechanism from a single-layer ultra-thin semiconductor film cathode
作者: Duan ZQ (Duan, Zhi-Qiang);  Wang RZ (Wang, Ru-Zhi);  Yuan RY (Yuan, Rui-Yang);  Yang W (Yang, Wei);  Wang B (Wang, Bo);  Yan H (Yan, Hui)
发表日期: 2007
摘要: Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin A1N film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering.
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Duan, ZQ (Duan, Zhi-Qiang); Wang, RZ (Wang, Ru-Zhi); Yuan, RY (Yuan, Rui-Yang); Yang, W (Yang, Wei); Wang, B (Wang, Bo); Yan, H (Yan, Hui) .Field emission mechanism from a single-layer ultra-thin semiconductor film cathode ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,OCT 7 2007,40 (19):5828-5832
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