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题名: Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
作者: Wang XY (Wang, Xiaoyan);  Wang XL (Wang, Xiaoliang);  Hu GX (Hu, Guoxin);  Wang BZ (Wang, Baozhu);  Ma ZY (Ma, Zhiyong);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Ran JX (Ran, Junxue);  Li JP (Li, Jianping)
发表日期: 2007
摘要: The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.
刊名: MICROELECTRONICS JOURNAL
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Hu, GX (Hu, Guoxin); Wang, BZ (Wang, Baozhu); Ma, ZY (Ma, Zhiyong); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Ran, JX (Ran, Junxue); Li, JP (Li, Jianping) .Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition ,MICROELECTRONICS JOURNAL,AUG-SEP 2007,38 (8-9):838-841
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