SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氧化硅上制备低阻碳化硅的方法
赵永梅; 孙国胜; 宁 瑾; 王 亮; 刘兴昉; 赵万顺; 王 雷; 李晋闽; 曾一平
2009-05-27
Rights Holder中科院半导体研究所
Date Available3996
Country中国
Subtype发明
Application Date2007-11-21
Language中文
Status公开
Application NumberCN200710177783
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9164
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵永梅,孙国胜,宁 瑾,等. 氧化硅上制备低阻碳化硅的方法[P]. 2009-05-27.
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