SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
图形衬底上生长碳化硅厚膜的方法
赵永梅; 孙国胜; 刘兴昉; 王 亮; 王 雷; 赵万顺; 李晋闽; 曾一平 
2009-05-27
Rights Holder中科院半导体研究所
Date Available3996
Country中国
Subtype发明
Application Date2007-11-21
Language中文
Status公开
Application NumberCN200710177781.1
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9150
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵永梅,孙国胜,刘兴昉,等. 图形衬底上生长碳化硅厚膜的方法[P]. 2009-05-27.
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