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题名: Magnetic properties of Mn-implanted n-type Ge
作者: Liu LF;  Chen NF;  Chen CL;  Li YL;  Yin ZG;  Yang F
发表日期: 2004
摘要: Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 10(16) cm(-2). Subsequent annealing was performed on the samples at 400 degreesC and 600 degreesC in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Ferromagnetism
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, LF; Chen, NF; Chen, CL; Li, YL; Yin, ZG; Yang, F .Magnetic properties of Mn-implanted n-type Ge ,JOURNAL OF CRYSTAL GROWTH,DEC 17 2004,273 (1-2):106-110
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