高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Electrical properties and electroluminescence of 4H-SiC p-n junction diodes
作者: Sun, GS;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM
发表日期: 2004
摘要: Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.
刊名: JOURNAL OF RARE EARTHS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
2723.pdf357KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM .Electrical properties and electroluminescence of 4H-SiC p-n junction diodes ,JOURNAL OF RARE EARTHS,DEC 2004,22 Sp.Iss.SI (0):275-278
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Sun, GS]的文章
 [Zhang, YX]的文章
 [Gao, X]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Sun, GS]的文章
 [Zhang, YX]的文章
 [Gao, X]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发