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题名: Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001
作者: Ma BS;  Su FH;  Ding K;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW
发表日期: 2005
摘要: The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.
KOS主题词: Electronic structure
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ma, BS; Su, FH; Ding, K; Li, GH; Zhang, Y; Mascarenhas, A; Xin, HP; Tu, CW .Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001 ,PHYSICAL REVIEW B,JAN 2005,71 (4):Art.No.045213
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