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题名: Recombination kinetics of Te isoelectronic centers in ZnSTe
作者: Yang XD;  Xu ZY;  Sun Z;  Sun BQ;  Li GH;  Sou IK;  Ge WK
发表日期: 2005
摘要: The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.
KOS主题词: Zinc sulfide
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yang, XD; Xu, ZY; Sun, Z; Sun, BQ; Li, GH; Sou, IK; Ge, WK .Recombination kinetics of Te isoelectronic centers in ZnSTe ,APPLIED PHYSICS LETTERS,JAN 31 2005,86 (5):Art.No.052107
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