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题名: Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides
作者: Chen YY;  Yu JZ;  Chen SW;  Fan ZC
发表日期: 2005
摘要: Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.
KOS主题词: Integrated optics
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen, YY; Yu, JZ; Chen, SW; Fan, ZC .Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides ,JOURNAL OF INFRARED AND MILLIMETER WAVES,FEB 2005,24 (1):53-55
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