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题名: Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
作者: Sun, J;  Jin, P;  Wang, ZG;  Zhang, HZ;  Wang, ZY;  Hu, LZ
发表日期: 2005
摘要: Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, J; Jin, P; Wang, ZG; Zhang, HZ; Wang, ZY; Hu, LZ .Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions ,THIN SOLID FILMS,APR 1 2005,476 (1):68-72
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