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题名: Comparison of the properties of GaN grown on complex Si-based structures
作者: Zhou, SQ;  Vantomme, A;  Zhang, BS;  Yang, H;  Wu, MF
发表日期: 2005
摘要: With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN layers have been grown on Si(Ill) semiconductor-on-insulator (SOI) and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. The epitaxial orientation is determined as GaN(0001)//Si(111), GaN[1120]//Si[110], and GaN[1010]//Si[112], and the GaN layer is tensilely strained in the direction parallel to the interface. According to Rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of GaN on Si(111) SOI is better than that of GaN on silicide. Room-temperature photoluminescence of GaN/SOI reveals a strong near-band-edge emission at 368 nm (3.37 eV) with a full width at half-maximum of 59 meV. (c) 2005 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhou, SQ; Vantomme, A; Zhang, BS; Yang, H; Wu, MF .Comparison of the properties of GaN grown on complex Si-based structures ,APPLIED PHYSICS LETTERS,FEB 21 2005,86 (8):Art.No.081912
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