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题名: Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique
作者: Dai L;  Liu SF;  Fu ZX;  You LP;  Zhu JJ;  Lin BX;  Zhang JC;  Qin GG
发表日期: 2005
摘要: GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.
刊名: JOURNAL OF CHEMICAL PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Dai, L; Liu, SF; Fu, ZX; You, LP; Zhu, JJ; Lin, BX; Zhang, JC; Qin, GG .Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique ,JOURNAL OF CHEMICAL PHYSICS,MAR 8 2005,122 (10):Art.No.104713
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