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题名: Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
作者: Chen, Z;  Chua, SJ;  Han, PD;  Liu, XL;  Lu, DC;  Zhu, QS;  Wang, ZG;  Tripathy, S
发表日期: 2005
摘要: In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen, Z; Chua, SJ; Han, PD; Liu, XL; Lu, DC; Zhu, QS; Wang, ZG; Tripathy, S .Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,APR 2005,27 (3):314-318
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