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题名: Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots
作者: Han, XX;  Li, JM;  Wu, JJ;  Wang, XH;  Li, DB;  Liu, XL;  Han, PD;  Zhu, QS;  Wang, ZG
发表日期: 2005
摘要: InGaN/GaN quantum dots were grown on the sapphire (0 0 0 1) substrate in a metalorganic chemical vapor deposition system. The morphologies of QDs deposited on different modified underlayer (GaN) surfaces, including naturally as grown, Ga-mediated, In-mediated, and air-passivated ones, were investigated by atomic force microscopy (AFM). Photo luminescence (PL) method is used to evaluate optical properties. It is shown that InGaN QDs can form directly on the natural GaN layer. However, both the size and distribution show obvious inhomogeneities. Such a heavy fluctuation in size leads to double peaks for QDs with short growth time, and broad peaks for QDs with long growth time in their low-temperature PL spectra. QDs grown on the Ga-mediated GaN underlayer tends to coalesce. Distinct transform takes place from 3D to 2D growth on the In-mediated ones, and thus the formation of QDs is prohibited. Those results clarify Ga and In's surfactant behavior. When the GaN underlayer is passivated in the air, and together with an additional low-temperature-grown seeding layer, however, the island growth mode is enhanced. Subsequently, grown InGaN QDs are characterized by a relatively high density and an improved Gaussian-like distribution in size. Short surface diffusion length at low growth temperature accounts for that result. It is concluded that reduced temperature favors QD's 3D growth and surface passivation can provide another promising way to obtain high-density QDs that especially suits MOCVD system. (c) 2004 Elsevier Ltd. All rights reserved.
KOS主题词: NANOSTRUCTURE
刊名: VACUUM
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Han, XX; Li, JM; Wu, JJ; Wang, XH; Li, DB; Liu, XL; Han, PD; Zhu, QS; Wang, ZG .Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots ,VACUUM,FEB 18 2005,77 (3):307-314
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