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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Study on growth mechanism of low-temperature prepared microcrystalline Si thin films
作者: Gu, JH;  Zhou, YQ;  Zhu, MF;  Li, GH;  Kun, D;  Zhou, BQ;  Liu, FZ;  Liu, JL;  Zhang, QF
发表日期: 2005
摘要: Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gu, JH; Zhou, YQ; Zhu, MF; Li, GH; Kun, D; Zhou, BQ; Liu, FZ; Liu, JL; Zhang, QF .Study on growth mechanism of low-temperature prepared microcrystalline Si thin films ,ACTA PHYSICA SINICA,APR 2005,54 (4):1890-1894
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