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题名: Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET
作者: Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Fan K;  Zhang EX;  Yi WB;  Chen M;  Wang X
发表日期: 2005
摘要: Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.
KOS主题词: Potential scattering
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zhang, EX; Yi, WB; Chen, M; Wang, X .Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET ,CHINESE PHYSICS LETTERS,MAR 2005,22 (3):654-656
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